These recitation notes were developed by Prof. Jing Kong, and were transcribed by Pavitra Krishnaswamy.
Abbreviations
MOS = metal-on-silicon
MOSFET = metal-oxide-semiconductor field-effect transistor
CMOS = complementary metal-oxide-semiconductor
BJT = bipolar junction transmitter
REC # | TOPICS | RECITATION NOTES |
---|---|---|
1 | Integrated circuit technology | (![]() |
2 | Equilibrium electron and hole concentration from doping | (![]() |
3 | Carrier action | (![]() |
4 | Electrostatic potential and carrier concentration | (![]() |
5 | Review of electrostatics | (![]() |
6 | p-n junction | (![]() |
7 | From n+p diode to MOS structure | (![]() |
8 | MOS electrostatics under bias, MOS capacitor | (![]() |
9 | MOSFET V-I characteristics | (![]() |
10 | MOSFET V-I characteristics: channel length modulation and back gate effect | (![]() |
11 | Small signal model of MOSFET, MOSFET in digital circuits | (![]() |
12 | CMOS noise margin | (![]() |
13 | Propagation delay, NAND/NOR gates | (![]() |
14 | p-n diode I-V characteristics (I) | (![]() |
15 | p-n diode I-V characteristics (II) | (![]() |
16 | Small signal model of p-n diode | (![]() |
17 | BJT: basic operation in forward-active regime | (![]() |
18 | BJT: regions of operation, small signal model | (![]() |
19 | Common emitter amplifier | (![]() |
20 | Amplifiers review | (![]() |
21 | Intrinsic frequency response of common source (CS) and common emitter (CE) amplifier | (![]() |
22 | CS amplifier frequency response | (![]() |
23 | Frequency response of common collector (CC) and common base (CB) amplifier | (![]() |
24 | BiCMOS cascode amplifier | (![]() |
25 | CMOS cascade amplifier | (![]() |